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Karthik Jambunathan
Karthik Jambunathan
Graduate Researcher
Department of Materials Science and Engineering
Office: 444 Materials Research Building
Phone: 217-333-5290
Fax: 217-333-2736
Email: kjambun2 at illinois.edu

Education
B. Tech., Metallurgical and Materials Engineering, Indian Institute of Technology, Madras (August 2006)mailto:kjambun2@illinois.edu?subject=shapeimage_4_link_0
Awards
Intel-Racheff Graduate Research Award, Department of Materials Science and Engineering, University of Illinois, Urbana-Champaign (April 2012)

Experience
University of Illinois, Urbana-Champaign - Urbana, IL (August 2007 - Present)
Graduate Researcher, Department of Materials Science and Engineering
Advisor: Professor L. W. Martin
Publications

J. Karthik, J. C. Agar, A. R. Damodaran, L. W. Martin, Effect of 90o domain walls and thermal expansion mismatch on the pyroelectric properties of epitaxial PbZr0.2Ti0.8O3 thin films, Phys. Rev. Lett., under review May 2012.
R. Jackson, P. C. Fletcher, J. Karthik, A. R. Damodaran, J. N. Emmerich, H. Teng, W. P. King, L. W. Martin, Electrical and thermal characterization of a ferroelectric thin film with an electro-thermal nanoprobe, Rev. Sci. Instru., under review May 2012.
C. R. Winkler, M. L. Jablonski, M. L. Taheri, A. R. Damodaran, J. Karthik, L. W. Martin, Accessing intermediate ferroelectric switching regimes with time-resolved TEM, J. Appl. Phys., under review April 2012.
S. Polisetty, J. Zhou, J. Karthik, A. R. Damodaran, D. Chen, A. Scholl, L. W. Martin, M. Holcomb, Linear dichroism dependence on ferroelectric polarization, J. Phys. Condens. Matter accepted April 2012.
C. R. Winkle, A. R. Damodaran, J. Karthik, L. W. Martin, M. L. Taheri, Direct observation of ferroelectric domain switching in varying electric field regimes using in situ TEM, accepted Micron, March 2012.
J. Karthik, A. R. Damodaran, L. W. Martin, Effect of 90o domain walls on the low-field permittivity of PbZr0.2Ti0.8O3 thin films, Phys. Rev. Lett. 108, 167601 (2012).
J. Karthik, A. R. Damodaran, L. W. Martin, Epitaxial ferroelectric heterostructures fabricated by selective area epitaxy of SrRuO3 using an MgO hard mask, Adv. Mater. 24, 1610 (2012).
A. R. Damodaran, S. Lee, J. Karthik, S. MacLaren, L. W. Martin, Temperature and thickness evolution and epitaxial breakdown in highly strained BiFeO3 thin films, Phys. Rev. B 85, 024113 (2012).
E. Breckenfeld, R. Wilson, J. Karthik, A. R. Damodaran, D. G. Cahill, L. W. Martin, Effect of growth induced (non)stoichiometry on the structure, dielectric response, and thermal conductivity of SrTiO3 thin films, Chem. Mater. 24, 331 (2012).
B. Bhatia, J. Karthik, D. G. Cahill, L. W. Martin, W. P. King, High-temperature piezoresponse force microscopy, Appl. Phys. Lett. 99, 173103 (2011).
J. Karthik, L. W. Martin, Effect of domain walls on the electrocaloric properties of Pb(Zr1-xTix)O3 thin films, Appl. Phys. Lett. 99, 032904 (2011). 
J. Karthik, L. W. Martin, Evolution of pyroelectric properties in polydomain Pb(Zr1-x, Tix)O3 thin films, Phys. Rev B 84, 024102 (2011).
J. Karthik, A. Sharma, A. Lakshminarayan, Entanglement, avoided crossings, and quantum chaos in an Ising model with a tilted magnetic field, Phys. Rev. A 75, 022304 (2007).http://www.sciencedirect.com/science/article/pii/S0968432812000522http://www.sciencedirect.com/science/article/pii/S0968432812000522http://www.sciencedirect.com/science/article/pii/S0968432812000522http://prl.aps.org/abstract/PRL/v108/i16/e167601http://prl.aps.org/abstract/PRL/v108/i16/e167601http://onlinelibrary.wiley.com/doi/10.1002/adma.201104697/abstracthttp://onlinelibrary.wiley.com/doi/10.1002/adma.201104697/abstracthttp://prb.aps.org/abstract/PRB/v85/i2/e024113http://prb.aps.org/abstract/PRB/v85/i2/e024113http://prb.aps.org/abstract/PRB/v85/i2/e024113http://pubs.acs.org/doi/abs/10.1021/cm203042qhttp://pubs.acs.org/doi/abs/10.1021/cm203042qhttp://pubs.acs.org/doi/abs/10.1021/cm203042qhttp://apl.aip.org/resource/1/applab/v99/i17/p173103_s1http://apl.aip.org/resource/1/applab/v99/i17/p173103_s1http://apl.aip.org/resource/1/applab/v99/i3/p032904_s1http://apl.aip.org/resource/1/applab/v99/i3/p032904_s1http://prb.aps.org/abstract/PRB/v84/i2/e024102http://prb.aps.org/abstract/PRB/v84/i2/e024102shapeimage_6_link_0shapeimage_6_link_1shapeimage_6_link_2shapeimage_6_link_3shapeimage_6_link_4shapeimage_6_link_5shapeimage_6_link_6shapeimage_6_link_7shapeimage_6_link_8shapeimage_6_link_9shapeimage_6_link_10shapeimage_6_link_11shapeimage_6_link_12shapeimage_6_link_13shapeimage_6_link_14shapeimage_6_link_15shapeimage_6_link_16shapeimage_6_link_17shapeimage_6_link_18